STMicroelectronics STWA60N0 N channel-Channel Power MOSFET, 62 A, 600 V N, 3-Pin TO-247 STWA60N035M9
- N° de stock RS:
- 762-554
- Référence fabricant:
- STWA60N035M9
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
7,40 €
(TVA exclue)
8,95 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 149 unité(s) expédiée(s) à partir du 27 juillet 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,40 € |
| 10 + | 5,39 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-554
- Référence fabricant:
- STWA60N035M9
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STWA60N0 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 321W | |
| Maximum Operating Temperature | 150°C | |
| Length | 21.1mm | |
| Height | 5.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 15.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STWA60N0 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 321W | ||
Maximum Operating Temperature 150°C | ||
Length 21.1mm | ||
Height 5.1mm | ||
Standards/Approvals RoHS Compliant | ||
Width 15.9mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
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