Vishay SiH N channel-Channel MOSFET, 34 A, 650 V Enhancement, 4-Pin PowerPAK SO-8 SiHH068N60E
- N° de stock RS:
- 735-156
- Référence fabricant:
- SiHH068N60E
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,83 €
(TVA exclue)
8,26 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 13 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,83 € |
| 10 - 49 | 4,22 € |
| 50 - 99 | 3,28 € |
| 100 + | 2,41 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 735-156
- Référence fabricant:
- SiHH068N60E
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.059Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 202W | |
| Forward Voltage Vf | 600V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Width | 8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK SO-8 | ||
Series SiH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.059Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 202W | ||
Forward Voltage Vf 600V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Width 8mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications
94A continuous drain current at TA=25°C
54.3nC typical total gate charge for fast switching
-55°C to +175°C extended junction temperature range
Liens connexes
- Vishay SiH N channel-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SO-8 SiHK045N60E
- Vishay SiH N channel-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SO-8 SiHH070N60EF
- Vishay SiH N channel-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SiHK055N60EF
- Vishay SiH N channel-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SiHK055N60E
- Vishay SiH N channel-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SiHK075N60EF
- Vishay SiH N channel-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SiHK045N60EF
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK110N65SF-T1GE3
- Vishay SIHA Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3