DiodesZetex DMG3406L N channel-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 DMG3406L-13
- N° de stock RS:
- 719-488
- Référence fabricant:
- DMG3406L-13
- Fabricant:
- DiodesZetex
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
0,58 €
(TVA exclue)
0,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 9 840 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 120 | 0,116 € | 0,58 € |
| 125 - 495 | 0,104 € | 0,52 € |
| 500 - 2495 | 0,092 € | 0,46 € |
| 2500 - 4995 | 0,08 € | 0,40 € |
| 5000 + | 0,072 € | 0,36 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-488
- Référence fabricant:
- DMG3406L-13
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMG3406L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.2nC | |
| Maximum Power Dissipation Pd | 1.4W | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 3mm | |
| Width | 2.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMG3406L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.2nC | ||
Maximum Power Dissipation Pd 1.4W | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 3mm | ||
Width 2.5mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for high efficiency power management applications. Engineered to minimise on-state resistance while delivering superior switching performance, this component is Ideal for battery charging, DC-DC converters, and portable power adaptors. Its robust mechanical design, combined with a lead-free and RoHS-compliant construction, underscores its commitment to environmental sustainability and reliability across a wide range of applications. Capable of handling substantial current loads, this MOSFET serves as an essential component for modern electronic systems requiring reliable power management.
Low on resistance for improved efficiency in power management
Fast switching speed enhances performance in dynamic applications
Low input capacitance reduces system power requirements
Designed for a maximum drain-source voltage of 30V, ensuring versatility
RoHS compliant, supporting eco-friendly device production
Total lead-free construction, aligning with environmental standards
High continuous drain current capability of 3.6A at 25°C maximizes application performance
Moisture sensitivity level 1 ensures robust reliability in various environments
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