DiodesZetex DMP3099L P-Channel MOSFET, -3.8 A, -30 V Enhancement, 3-Pin SOT-23 DMP3099L-13
- N° de stock RS:
- 719-578
- Référence fabricant:
- DMP3099L-13
- Fabricant:
- DiodesZetex
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
0,35 €
(TVA exclue)
0,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 120 | 0,07 € | 0,35 € |
| 125 - 495 | 0,062 € | 0,31 € |
| 500 - 2495 | 0,056 € | 0,28 € |
| 2500 - 4995 | 0,048 € | 0,24 € |
| 5000 + | 0,044 € | 0,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-578
- Référence fabricant:
- DMP3099L-13
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | -3.8A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | DMP3099L | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.08W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | -1.26V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.15mm | |
| Width | 2.5 mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id -3.8A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series DMP3099L | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.08W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf -1.26V | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.15mm | ||
Width 2.5 mm | ||
Length 3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The DiodesZetex P Channel enhancement mode MOSFET designed for high-efficiency power management applications. This device excels in minimising on-state resistance while maintaining superior switching performance, making it highly suitable for power management functions such as DC-DC converters and backlighting. It is engineered to operate effectively in automotive and general-purpose markets, embodying a 'Green' initiative by being lead-free and RoHS compliant, which adds to its appeal in environmentally-conscious applications. Moreover, the device accommodates a wide temperature range, ensuring reliable operation in various environmental conditions.
Low gate threshold voltage ensures efficient operation in low-power applications
Max drain-source voltage of -30V accommodates a wide variety of applications
Static drain-source on-resistance as low as 65mΩ minimises energy loss during operation
Compliant with EU RoHS directives, ensuring environmental safety and regulatory adherence
Designed with low input capacitance enhancing switching speed for efficient performance
Total power dissipation capability of 1.08W allows for thermal management in Compact designs
Liens connexes
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