DiodesZetex DMN3023L N channel-Channel MOSFET, 6.2 A, 30 V Enhancement, 3-Pin SOT-23 DMN3023L-7

Sous-total (1 bobine de 3000 unités)*

351,00 €

(TVA exclue)

426,00 €

(TVA incluse)

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Prix par unité
la bobine*
3000 +0,117 €351,00 €

*Prix donné à titre indicatif

N° de stock RS:
718-542
Référence fabricant:
DMN3023L-7
Fabricant:
DiodesZetex
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Marque

DiodesZetex

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.2A

Maximum Drain Source Voltage Vds

30V

Series

DMN3023L

Package Type

SOT-23

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

68mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.3W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-50°C

Typical Gate Charge Qg @ Vgs

18.4nC

Maximum Operating Temperature

150°C

Height

1mm

Length

3mm

Automotive Standard

AEC-Q101

Pays d'origine :
CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management applications. Its Advanced structure minimises on-state resistance, making it Ideal for a variety of applications where power efficiency is paramount. With excellent switching capabilities and minimal gate threshold voltage, this MOSFET offers reliable performance in both consumer and industrial electronic devices. The product is compliant with RoHS and features ESD protection, ensuring safety and longevity in various operating conditions.

Low on resistance of 25mΩ at VGS = 10V for reduced power loss

Low gate threshold voltage enhances compatibility with low-voltage control signals

Fast switching speed supports high-frequency applications effectively

ESD protected gate ensures device reliability under dynamic conditions

Totally lead-free and fully RoHS compliant for environmental safety

Halogen and antimony-free, contributing to its classification as a 'Green' device

Qualified to AEC-Q101 standards, ensuring high reliability for automotive applications

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