DiodesZetex DMN62D0U N channel-Channel MOSFET, 430 mA, 60 V Enhancement, 3-Pin SOT-23 DMN62D0U-7
- N° de stock RS:
- 719-570
- Référence fabricant:
- DMN62D0U-7
- Fabricant:
- DiodesZetex
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
117,00 €
(TVA exclue)
141,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 12000 | 0,039 € | 117,00 € |
| 15000 + | 0,038 € | 114,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-570
- Référence fabricant:
- DMN62D0U-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 430mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | DMN62D0U | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 590mW | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 2.5mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 430mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series DMN62D0U | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 590mW | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 2.5mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management in various applications. This device excels in minimising on-state resistance while ensuring Rapid switching performance, making it Ideal for motor controls and power-management functions. With a robust construction tailored for automotive applications and compliance with stringent standards such as AEC-Q100, it meets industry demands for reliability and safety. Its versatile application range and high thermal stability ensure dependable operation in demanding environments.
Low on resistance ensures efficient power conversion
Fast switching speeds improve overall circuit performance
Robust design supports automotive applications, compliant with AEC-Q100
Offers low input capacitance for reduced signal delay
Lead-free and RoHS compliant, contributing to environmental sustainability
ESD protection up to 1kV enhances reliability
Optimised thermal characteristics support high power dissipation
Dimensions and weight are tailored for efficient space utilisation
Liens connexes
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