Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- N° de stock RS:
- 598-471
- Référence fabricant:
- TP5322K1-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 3000 unités)*
1 875,00 €
(TVA exclue)
2 268,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 avril 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,625 € | 1 875,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-471
- Référence fabricant:
- TP5322K1-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 450mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.2mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 4.2 mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type N-Channel Vertical DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 450mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Length 4.2mm | ||
Standards/Approvals RoHS Compliant | ||
Width 4.2 mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- TH
The Microchip P channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices.
High input impedance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Liens connexes
- Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
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