Microchip TN2425 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3
- N° de stock RS:
- 598-189
- Référence fabricant:
- TN2425N8-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 2000 unités)*
2 202,00 €
(TVA exclue)
2 664,00 €
(TVA incluse)
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 1,101 € | 2 202,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-189
- Référence fabricant:
- TN2425N8-G
- Fabricant:
- Microchip
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Maximum Continuous Drain Current Id | 450mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TN2425 | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.3mm | |
| Width | 4.2 mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 4.2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel Vertical DMOS FET | ||
Maximum Continuous Drain Current Id 450mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TN2425 | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Height 5.3mm | ||
Width 4.2 mm | ||
Standards/Approvals RoHS Compliant | ||
Length 4.2mm | ||
Automotive Standard No | ||
The Microchip N channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Liens connexes
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