Infineon AIMZA75 Type N-Channel MOSFET, 163 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R008M1HXKSA1
- N° de stock RS:
- 351-988
- Référence fabricant:
- AIMZA75R008M1HXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
55,14 €
(TVA exclue)
66,72 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 juin 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 55,14 € |
| 10 - 99 | 49,63 € |
| 100 + | 45,78 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-988
- Référence fabricant:
- AIMZA75R008M1HXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 163A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | AIMZA75 | |
| Package Type | PG-TO247-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 14.0mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.3V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 517W | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 21.1mm | |
| Standards/Approvals | AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 163A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series AIMZA75 | ||
Package Type PG-TO247-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 14.0mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.3V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 517W | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 21.1mm | ||
Standards/Approvals AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC Automotive MOSFET is built over the solid silicon carbide technology. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Superior efficiency in hard switching
Enables higher switching frequency
Higher reliability
Robustness against parasitic turn
Unipolar driving
Liens connexes
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