Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S10S1XTMA1
- N° de stock RS:
- 351-971
- Référence fabricant:
- IGC033S10S1XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
8,30 €
(TVA exclue)
10,04 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 4 860 unité(s) expédiée(s) à partir du 10 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 4,15 € | 8,30 € |
| 20 - 198 | 3,745 € | 7,49 € |
| 200 - 998 | 3,445 € | 6,89 € |
| 1000 - 1998 | 3,205 € | 6,41 € |
| 2000 + | 2,87 € | 5,74 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-971
- Référence fabricant:
- IGC033S10S1XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IGC033 | |
| Package Type | PG-VSON-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IGC033 | ||
Package Type PG-VSON-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon IGC033 Series MOSFET, 100V Drain Source Voltage, 76A Continuous Drain Current - IGC033S10S1XTMA1
This MOSFET is a P-channel enhancement device designed for high-current switching in surface-mounted electronics. It operates across a wide temperature range and is suited to demanding thermal environments while providing low-resistance conduction for power management and conversion tasks.
Features and Benefits:
• 3.3mΩ drain-source resistance for minimal conduction loss
• 76A continuous drain current enabling heavy-load switching
• 100V drain-source rating for high-voltage applications
• 11nC typical gate charge for faster switching transitions
• 45W maximum power dissipation supporting elevated loads
• 5.5V maximum gate-source tolerance for low-voltage drive compatibility
• 76A continuous drain current enabling heavy-load switching
• 100V drain-source rating for high-voltage applications
• 11nC typical gate charge for faster switching transitions
• 45W maximum power dissipation supporting elevated loads
• 5.5V maximum gate-source tolerance for low-voltage drive compatibility
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for motor driver stages requiring high current
• Used for high-voltage load switching in industrial systems
• Can be used for server and telecoms power distribution
• Appropriate for compact surface-mount power modules
• Ideal for motor driver stages requiring high current
• Used for high-voltage load switching in industrial systems
• Can be used for server and telecoms power distribution
• Appropriate for compact surface-mount power modules
What package type should I plan for on my board?
It is supplied in a PG-VSON-6 surface-mount package requiring a six-pin footprint and thermal pad considerations to dissipate heat.
How does temperature range affect deployment choices?
With an operating range from -40 to 150°C it can be placed in environments with wide thermal variation, though layout must ensure sufficient thermal conduction to stay within dissipation limits.
What gate-drive levels are acceptable for switching?
Drive voltages must not exceed 5.5V between gate and source
typical low-voltage gate-drive circuits are appropriate given the modest gate charge.
Are there specific considerations for power dissipation management?
The 45W maximum requires adequate copper area or heatsinking on the PCB and consideration of duty cycle to prevent junction overheating.
Liens connexes
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