Infineon IGLT65 N-Channel MOSFET, 47 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R035D2ATMA1
- N° de stock RS:
- 351-889
- Référence fabricant:
- IGLT65R035D2ATMA1
- Fabricant:
- Infineon
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9,64 €
(TVA exclue)
11,66 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 9,64 € |
| 10 - 99 | 8,68 € |
| 100 + | 8,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-889
- Référence fabricant:
- IGLT65R035D2ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IGLT65 | |
| Package Type | PG-HDSOP-16 | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 0.042Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 154W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IGLT65 | ||
Package Type PG-HDSOP-16 | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 0.042Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 154W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10V | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon IGLT65 Series MOSFET, 650V Drain Source Voltage, 47A Continuous Drain Current - IGLT65R035D2ATMA1
This MOSFET is a high-voltage N-channel enhancement device designed for industrial power switching and control. It operates across a wide ambient range and is intended for surface-mount circuit assemblies where robust drain-to-source voltage handling and moderate gate charge are required. The package supports multi-pin mounting and integration into compact power modules for demanding electronic systems.
Features and Benefits:
• 650V drain-source rating for high-voltage switching applications
• 47A continuous drain current enabling elevated current handling
• 0.042 Ω RDS(on) for reduced conduction losses
• 154W power dissipation to manage thermal loading
• 7.7 nC typical gate charge for efficient gate driving
• PG‑HDSOP‑16 surface-mount package for compact PCB layouts
• 47A continuous drain current enabling elevated current handling
• 0.042 Ω RDS(on) for reduced conduction losses
• 154W power dissipation to manage thermal loading
• 7.7 nC typical gate charge for efficient gate driving
• PG‑HDSOP‑16 surface-mount package for compact PCB layouts
Applications
• Suitable for industrial high-voltage inverter stages
• Used with power supplies requiring 47A switching capability
• Ideal for motor-drive front‑ends in industrial equipment
• Can be used for snubber and clamp circuits in high-voltage systems
• Suitable for compact power modules needing surface-mount MOSFETs
• Used with power supplies requiring 47A switching capability
• Ideal for motor-drive front‑ends in industrial equipment
• Can be used for snubber and clamp circuits in high-voltage systems
• Suitable for compact power modules needing surface-mount MOSFETs
What temperature extremes can it tolerate in operation?
It is specified to operate between -55 °C and 150 °C, allowing use in harsh thermal environments and extended‑temperature industrial installations.
How many pins does the package present for PCB layout considerations?
The component uses a 16‑pin configuration which informs footprint design and thermal via placement for effective heat spreading.
What gate drive voltage limitations should be observed?
The maximum gate‑to‑source voltage is 10V, so gate driver circuits must limit drive amplitude accordingly.
Does the device meet industry standard testability for industrial applications?
It is produced to JEDEC criteria for industrial use, aligning it with common qualification and reliability expectations for that sector.
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