Infineon 600V CoolMOS Type N-Channel MOSFET, 50 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60R010S7XTMA1
- N° de stock RS:
- 284-890
- Référence fabricant:
- IPQC60R010S7XTMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 750 unités)*
16 182,75 €
(TVA exclue)
19 581,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 750 + | 21,577 € | 16 182,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-890
- Référence fabricant:
- IPQC60R010S7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HDSOP-22 | |
| Series | 600V CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 694W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HDSOP-22 | ||
Series 600V CoolMOS | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 694W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC for Industrial Applications | ||
Automotive Standard No | ||
The Infineon MOSFET with cutting edge 600V CoolMOS SJ S7 Power Device represents a remarkable Leap in MOSFET technology, specifically tailored for low frequency switching applications. Engineered with the utmost precision, this device offers unparalleled energy efficiency, making it an Ideal choice for solid state relays, circuit breakers, and various power management systems. The Advanced design, showcasing a Compact footprint and superior heat dissipation capabilities, ensures optimal performance under demanding conditions. Recognised for its distinct advantages over traditional electromechanical components, this device integrates seamless switching with exceptional reliability. It is fully qualified according to JEDEC standards for industrial applications, providing reassurance of its robustness and dependability in a wide range of environments.
Optimised for price and performance
High Pulse current capability for robustness
Kelvin source pin enhances switching performance
Supports applications facing shock and vibration
Internal body diode minimises conduction losses
Accommodates TOP side cooling for better thermal performance
Liens connexes
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