Infineon 650V CoolMOS SiC N-Channel MOSFET, 29 A, 650 V, 22-Pin PG-HDSOP-22 IPDQ65R099CFD7XTMA1

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Sous-total (1 bobine de 750 unités)*

2 508,75 €

(TVA exclue)

3 035,25 €

(TVA incluse)

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Prix par unité
la bobine*
750 +3,345 €2 508,75 €

*Prix donné à titre indicatif

N° de stock RS:
284-881
Référence fabricant:
IPDQ65R099CFD7XTMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features a 650V CoolMOS CFD7 is engineered for superior performance in demanding applications. Specifically tailored for resonant switching topologies like LLC and phase shift full bridge designs, this power device elevates efficiency standards through its enhanced thermal characteristics and improved switching capabilities. As a vital upgrade from its predecessor, the CFD2, it is designed to provide exceptional ruggedness and reliability, making it ideal for high efficiency power supply solutions across industries ranging from telecommunications to electric vehicle charging. The integration of fast body diode technology further enhances its performance, ensuring top tier efficiency while maintaining optimal thermal management, supporting increased power density solutions.

Ultra fast body diode for rapid switching
Optimised for low switching losses
Durable design ensures hard commutation
Supports broader bus voltage applications
Ideal for industrial SMPS efficiency
Facilitates high power density solutions
Fully qualified per JEDEC standards

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