Infineon 600V CoolMOS Type N-Channel MOSFET, 149 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R015CFD7XTMA1
- N° de stock RS:
- 284-735
- Référence fabricant:
- IPDQ60R015CFD7XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
30,64 €
(TVA exclue)
37,07 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 95 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 30,64 € |
| 10 - 99 | 27,57 € |
| 100 + | 25,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-735
- Référence fabricant:
- IPDQ60R015CFD7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 149A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HDSOP-22 | |
| Series | 600V CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 251nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 657W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 149A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HDSOP-22 | ||
Series 600V CoolMOS | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 251nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 657W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC for Industrial Applications | ||
Automotive Standard No | ||
The Infineon MOSFET features a 600V CoolMOS CFD7 Power Transistor is engineered to excel in high voltage power applications, delivering unparalleled efficiency and reliability. Utilising Advanced super junction technology, this product offers a seamless upgrade over its predecessor, the CFD2 series. With a design focused on soft switching applications such as phase shift full bridge converters and LLC circuits, it ensures optimal performance. Enhanced features like reduced gate charge and minimal reverse recovery charge make this transistor a go to solution for modern energy systems. Its Compact PG HDSOP 22 package guarantees easy integration into existing designs, maximising power density while minimising installation complexity. The CoolMOS CFD7 is also fully compliant with JEDEC standards for industrial applications, ensuring long term stability and reliability in demanding environments.
Optimised for soft switching topologies
Ultra fast body diode for high speed switching
Integrated thermal management extends longevity
Tailored for resonant topologies boosting efficiency
Compact design simplifies PCB mounting
Maximises power density for space constraints
Robust commutation ensures reliable operation
Enhances reliability standards for industrial use
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