Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-729
Référence fabricant:
IMT65R072M1HXUMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon 650 V CoolSiC MOSFET represents a pinnacle of performance and reliability, expertly engineered for a wide range of demanding applications. Built on advanced silicon carbide technology, this device provides exceptional efficiency, particularly in high temperature environments. With over two decades of development, it combines outstanding switching capabilities and robustness to simplify integration into your circuitry. Designed for versatility, its unique characteristics make it ideally suited for applications such as switch mode power supplies, uninterruptible power supplies, and energy efficient electric vehicle infrastructure. Trust in this advanced MOSFET to enhance your system’s performance while reducing size and cost.

Optimised for high current switching
Resilient fast body diode for commutation
Thermal stability at elevated temperatures
Minimal input capacitance ensures rapid response
Extended gate oxide reliability for longevity
Low total gate charge for efficiency
Seamless integration with standard drivers
Reduced losses via Kelvin source configuration
Qualified for industrial applications per JEDEC
Compact design promotes higher power density

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