Infineon OptiMOS Type N-Channel MOSFET, 120 A, 120 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1
- N° de stock RS:
- 284-711
- Référence fabricant:
- IAUTN12S5N018TATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,86 €
(TVA exclue)
8,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,86 € |
| 10 - 99 | 6,19 € |
| 100 - 499 | 5,70 € |
| 500 - 999 | 5,28 € |
| 1000 + | 4,74 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-711
- Référence fabricant:
- IAUTN12S5N018TATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS | |
| Package Type | PG-HDSOP-16-1 | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 358W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS | ||
Package Type PG-HDSOP-16-1 | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 358W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Automotive Power MOSFET offers exceptional performance and reliability for automotive applications. With its N channel enhancement mode design, this power transistor is engineered to meet the stringent requirements of the automotive sector, ensuring superior efficiency and robust functionality. Boasting an extended qualification beyond AEC Q101, it undergoes enhanced electrical testing to guarantee durability even in harsh environments. This device supports a wide operating temperature range, making it suitable for diverse automotive conditions. Its low on state resistance and high continuous drain current capability make this MOSFET an Ideal choice for demanding power management tasks, ensuring that vehicle performance remains uncompromised.
Designed for automotive compliance
Robust for challenging environments
Enhanced testing for reliability
Excellent thermal performance
High efficiency with minimal loss
Avalanche rated for energy transients
MSL1 classification up to 260°C
Advanced gate charge for efficient switching
Liens connexes
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