Infineon OptiMOS Type N-Channel MOSFET, 331 A, 120 V Enhancement, 8-Pin PG-HSOF-8 IPT017N12NM6ATMA1
- N° de stock RS:
- 284-689
- Référence fabricant:
- IPT017N12NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
4,54 €
(TVA exclue)
5,49 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 4,54 € |
| 10 - 99 | 4,08 € |
| 100 - 499 | 3,77 € |
| 500 - 999 | 3,49 € |
| 1000 + | 3,13 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-689
- Référence fabricant:
- IPT017N12NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 331A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-HSOF-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 395W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 331A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-HSOF-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 395W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 6 power transistor sets a new Benchmark for performance in the semiconductor industry. Engineered for high efficiency and exceptional thermal management, this product excels in demanding applications. With a robust design that supports 120V, it is tailored for high frequency switching, offering reliability and speed without compromising on energy efficiency. The N channel MOSFET integrates very low on resistance and minimal gate charge, making it an Ideal solution for power conversion and control in industrial settings. Its Advanced engineering ensures compliance with RoHS and other environmental standards, making it both a sustainable and performance driven choice for modern electronics.
Optimised for high frequency performance
Excellent thermal efficiency for reliability
Low on resistance reduces energy losses
Fast gate charge for swift operations
Qualified for industrial performance
Environmentally compliant for sustainability
Handles high avalanche energy safely
Wide operating temperature range
Liens connexes
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