Infineon OptiMOS Type N-Channel MOSFET, 314 A, 120 V Enhancement, 8-Pin PG-HSOF-8-1 IAUTN12S5N017ATMA1
- N° de stock RS:
- 284-669
- Référence fabricant:
- IAUTN12S5N017ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
10,79 €
(TVA exclue)
13,056 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,395 € | 10,79 € |
| 20 - 198 | 4,86 € | 9,72 € |
| 200 - 998 | 4,48 € | 8,96 € |
| 1000 + | 4,16 € | 8,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-669
- Référence fabricant:
- IAUTN12S5N017ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 314A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS | |
| Package Type | PG-HSOF-8-1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 358W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 314A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS | ||
Package Type PG-HSOF-8-1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 358W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 automotive power MOSFET is engineered for robust performance in demanding applications. Featuring the OptiMOS 5 technology, it excels in efficiency and reliability, making it an Ideal choice for automotive power management solutions. Its N channel enhancement mode structure delivers high level functionality while adhering to rigorous industry standards. Designed to withstand extreme conditions, this power transistor ensures operability up to 175°C and features an extended qualification beyond AEC Q101.
Optimised for automotive compatibility
Enhanced testing ensures dependable performance
Robust design with Advanced thermal management
MSL1 rating supports 260°C Peak reflow
RoHS compliant for eco friendly initiatives
Avalanche testing confirms transient resilience
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