Nexperia PSM Type N-Channel MOSFET, 200 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R9-40YSBX
- N° de stock RS:
- 219-499
- Référence fabricant:
- PSMN1R9-40YSBX
- Fabricant:
- Nexperia
Sous-total (1 bobine de 1500 unités)*
1 942,50 €
(TVA exclue)
2 350,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 500 unité(s) expédiée(s) à partir du 23 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 1,295 € | 1 942,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-499
- Référence fabricant:
- PSMN1R9-40YSBX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 194W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 194W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. It is optimized to improve EMC performance by up to 6 dB. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, battery isolation, industrial load-switching, eFuse, and inrush management.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
Liens connexes
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