STMicroelectronics SuperMESH N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-220 STP6NK60Z
- N° de stock RS:
- 151-942
- Référence fabricant:
- STP6NK60Z
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
14,40 €
(TVA exclue)
17,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 30 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,44 € | 14,40 € |
| 100 + | 1,387 € | 13,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-942
- Référence fabricant:
- STP6NK60Z
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperMESH | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.4mm | |
| Standards/Approvals | RoHS | |
| Length | 28.9mm | |
| Height | 28.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperMESH | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 150°C | ||
Width 10.4mm | ||
Standards/Approvals RoHS | ||
Length 28.9mm | ||
Height 28.9mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET is obtained through an extreme optimization of well established strip based Power MESH layout. In addition to pushing on resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Liens connexes
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