Références fabricant

Infineon IKW75N60TFKSA1, Type N-Channel IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

N° de stock RS:: 754-5402
Référence fabricant:: IKW75N60TFKSA1
Fabricant:: Infineon

Infineon IKW75N60TFKSA1, Type N-Channel IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

Offre groupée disponible

Sous-total (1 unité)*

6,53 €

(TVA exclue)

7,90 €

(TVA incluse)

Ajouter 13 unités pour bénéficier d'une livraison gratuite

Commandes ci-dessous 75,00 € coût (TVA exclue) 5,95 €.

Temporairement en rupture de stock

240 unité(s) expédiée(s) à partir du 19 mars 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité
1 - 4	6,53 €
5 - 9	6,26 €
10 - 14	6,06 €
15 - 19	5,88 €
20 +	5,77 €

*Prix donné à titre indicatif

N° de stock RS:: 754-5402
Référence fabricant:: IKW75N60TFKSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Maximum Continuous Collector Current Ic	75A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	428W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Maximum Operating Temperature	175°C
	Series	TrenchStop
	Standards/Approvals	RoHS, JEDEC, Pb-free lead plating
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Maximum Continuous Collector Current Ic 75A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 428W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Maximum Operating Temperature 175°C
	Series TrenchStop
	Standards/Approvals RoHS, JEDEC, Pb-free lead plating
	Automotive Standard No

Infineon IGBT, 80A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW75N60TFKSA1

This IGBT is a high-performance semiconductor component designed for power electronics applications. With a maximum continuous collector current of 80A, it operates efficiently in high-voltage environments, rated for 600V. The device is packaged in a TO-247 format, ideal for through-hole mounting.

Features & Benefits

• Low collector-emitter saturation voltage enhances efficiency

• High switching speed reduces energy loss during operation

• Positive temperature coefficient ensures stable performance

• Compatible with a wide temperature range from -40°C to +175°C

Applications

• Suitable for use in frequency converters in industrial settings

• Ideal for uninterruptible power supply systems

• Utilised in motor control for automation

• Effective for renewable energy systems to ensure efficiency

What are the implications of short circuit withstand time for my application?

The short circuit withstand time of 5μs allows for reliable protection in applications that may encounter fault conditions, ensuring that the device can endure brief overcurrent situations without immediate failure.

How does the high switching speed impact system efficiency?

A high switching speed of 20kHz minimises energy losses during transitions, significantly improving overall system efficiency and performance, particularly in fast-response applications.

What are the thermal management considerations for optimal performance?

Thermal resistance values indicate effective heat dissipation from junction to case; managing junction temperatures within specified limits is crucial to maintain reliable operation and extend component lifespan.