Infineon IKP20N60TAHKSA1 IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole

Voir l’ensemble des IGBTs
Offre groupée disponible

Sous-total (1 tube de 500 unités)*

799,00 €

(TVA exclue)

967,00 €

(TVA incluse)

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Unité
Prix par unité
le tube*
500 - 5001,598 €799,00 €
1000 - 20001,557 €778,50 €
2500 +1,518 €759,00 €

*Prix donné à titre indicatif

N° de stock RS:
857-8595
Référence fabricant:
IKP20N60TAHKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

70 W

Package Type

TO-220AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.36 x 4.57 x 15.95mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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