IXYS IXYH30N120C3D1 IGBT, 66 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 808-0271
- Référence fabricant:
- IXYH30N120C3D1
- Fabricant:
- IXYS
Offre groupée disponible
Sous-total (1 unité)*
8,29 €
(TVA exclue)
10,03 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 155 unité(s) expédiée(s) à partir du 29 décembre 2025
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,29 € |
| 10 - 19 | 7,45 € |
| 20 - 49 | 7,09 € |
| 50 - 249 | 6,23 € |
| 250 + | 5,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 808-0271
- Référence fabricant:
- IXYH30N120C3D1
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Maximum Continuous Collector Current | 66 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 416 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.46mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Maximum Continuous Collector Current 66 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 416 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.46mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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