IXYS IXYH50N120C3D1, Type N-Channel high Speed IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 808-0281
- Numéro d'article Distrelec:
- 302-53-449
- Référence fabricant:
- IXYH50N120C3D1
- Fabricant:
- IXYS
Offre groupée disponible
Sous-total (1 unité)*
13,24 €
(TVA exclue)
16,02 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 30 unité(s) expédiée(s) à partir du 04 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 5 | 13,24 € |
| 6 - 14 | 12,16 € |
| 15 + | 11,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 808-0281
- Numéro d'article Distrelec:
- 302-53-449
- Référence fabricant:
- IXYH50N120C3D1
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | high Speed IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 625W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 4V | |
| Maximum Operating Temperature | 150°C | |
| Series | GenX3TM | |
| Length | 20.32mm | |
| Standards/Approvals | International Standard Package | |
| Width | 16.26 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type high Speed IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 625W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 4V | ||
Maximum Operating Temperature 150°C | ||
Series GenX3TM | ||
Length 20.32mm | ||
Standards/Approvals International Standard Package | ||
Width 16.26 mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.