IXYS IXYH50N120C3, Type N-Channel high Speed IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 808-0287
- Numéro d'article Distrelec:
- 302-53-448
- Référence fabricant:
- IXYH50N120C3
- Fabricant:
- IXYS
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
10,51 €
(TVA exclue)
12,72 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 unité(s) expédiée(s) à partir du 03 juin 2026
- Plus 221 unité(s) expédiée(s) à partir du 10 juin 2026
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Unité | Prix par unité |
|---|---|
| 1 - 1 | 10,51 € |
| 2 - 4 | 9,96 € |
| 5 - 9 | 9,67 € |
| 10 - 14 | 9,43 € |
| 15 + | 9,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 808-0287
- Numéro d'article Distrelec:
- 302-53-448
- Référence fabricant:
- IXYH50N120C3
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | high Speed IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 750W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.32mm | |
| Series | GenX3TM | |
| Standards/Approvals | International Standard Package | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type high Speed IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 750W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 20.32mm | ||
Series GenX3TM | ||
Standards/Approvals International Standard Package | ||
Automotive Standard No | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.