Toshiba GT15J341, Type N-Channel IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
- N° de stock RS:
- 168-7763
- Référence fabricant:
- GT15J341
- Fabricant:
- Toshiba
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 168-7763
- Référence fabricant:
- GT15J341
- Fabricant:
- Toshiba
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Toshiba | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 15A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Package Type | TO-220SIS | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Sélectionner tout | ||
|---|---|---|
Marque Toshiba | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 15A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Package Type TO-220SIS | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Operating Temperature 150°C | ||
- Pays d'origine :
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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