Semikron Danfoss SKM100GB125DN, Type N-Channel Dual Half Bridge IGBT Module, 100 A 1200 V, 7-Pin SEMITRANS, Panel
- N° de stock RS:
- 468-2410
- Référence fabricant:
- SKM100GB125DN
- Fabricant:
- Semikron Danfoss
Offre groupée disponible
Sous-total (1 unité)*
218,26 €
(TVA exclue)
264,09 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 125 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité |
|---|---|
| 1 - 1 | 218,26 € |
| 2 - 4 | 207,33 € |
| 5 - 9 | 197,09 € |
| 10 - 19 | 187,05 € |
| 20 + | 177,66 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 468-2410
- Référence fabricant:
- SKM100GB125DN
- Fabricant:
- Semikron Danfoss
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Semikron Danfoss | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Configuration | Dual Half Bridge | |
| Package Type | SEMITRANS | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Minimum Operating Temperature | 150°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.85V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | -40°C | |
| Standards/Approvals | No | |
| Length | 94.5mm | |
| Height | 30.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Semikron Danfoss | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Configuration Dual Half Bridge | ||
Package Type SEMITRANS | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 7 | ||
Minimum Operating Temperature 150°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.85V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature -40°C | ||
Standards/Approvals No | ||
Length 94.5mm | ||
Height 30.5mm | ||
Automotive Standard No | ||
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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