Infineon FS75R12KT3GBOSA1 IGBT Module, 100 A 1200 V Module, Panel
- N° de stock RS:
- 273-7408
- Référence fabricant:
- FS75R12KT3GBOSA1
- Fabricant:
- Infineon
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 273-7408
- Référence fabricant:
- FS75R12KT3GBOSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 100A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 355W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 125°C | |
| Height | 20.5mm | |
| Length | 122mm | |
| Standards/Approvals | EN61140, IEC61140 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 100A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 355W | ||
Package Type Module | ||
Mount Type Panel | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 125°C | ||
Height 20.5mm | ||
Length 122mm | ||
Standards/Approvals EN61140, IEC61140 | ||
Automotive Standard No | ||
The Infineon IGBT module has 1200V collector emitter voltage and 75A continuous DC collector current. It has low stray inductance module design. This IGBT module available with fast TRENCHSTOP IGBT3, emitter controlled high efficiency diode and NTC.
Thermal resistance
High power density
Compact module concept