Infineon IGBT, 40 A 650 V, 3-Pin PG-TO-247
- N° de stock RS:
- 258-0990
- Référence fabricant:
- IGW40N65H5FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
58,17 €
(TVA exclue)
70,38 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 1,939 € | 58,17 € |
| 60 - 120 | 1,842 € | 55,26 € |
| 150 - 270 | 1,765 € | 52,95 € |
| 300 - 570 | 1,687 € | 50,61 € |
| 600 + | 1,61 € | 48,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0990
- Référence fabricant:
- IGW40N65H5FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Series | Highspeed5IGBTinTRENCHSTOPTM5technology | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Series Highspeed5IGBTinTRENCHSTOPTM5technology | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP 5 IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow.
650V breakthrough voltage
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
Liens connexes
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