onsemi IGBT Module Q1BOOST, Surface
- N° de stock RS:
- 245-6983
- Référence fabricant:
- NXH40B120MNQ1SNG
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 245-6983
- Référence fabricant:
- NXH40B120MNQ1SNG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT Module | |
| Maximum Power Dissipation Pd | 156W | |
| Number of Transistors | 3 | |
| Package Type | Q1BOOST | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | NXH40B120MNQ1SNG | |
| Width | 32.8mm | |
| Length | 55.2mm | |
| Height | 13.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT Module | ||
Maximum Power Dissipation Pd 156W | ||
Number of Transistors 3 | ||
Package Type Q1BOOST | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series NXH40B120MNQ1SNG | ||
Width 32.8mm | ||
Length 55.2mm | ||
Height 13.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel-plated DBC
The ON Semiconductor NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
40 m/1200 V SiC MOSFET Half−Bridge
Thermistor
Options with Pre Applied Thermal Interface Material and without Pre Applied TIM
Press Fit Pins
These Devices are Pb Free, Halide Free and are RoHS Compliant
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