Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
- N° de stock RS:
- 244-5819
- Référence fabricant:
- FD150R12RT4HOSA1
- Fabricant:
- Infineon
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 244-5819
- Référence fabricant:
- FD150R12RT4HOSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 790 W | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 790 W | ||
The infineon IGBT modules with fast trench/fieldstop IGBT4 and emitter controlled 4 diode are the right choice for your design it is suitable for typical applications like high frequency switching applications motor drives, UPS systems.
Electrical features
Extended operation temperature Tvj op
Low switching losses
Low VCEsat
Tvj op = 150° C
VCEsat with positive temperature coefficient
Mechanical features
Isolated base plate
Standard housing
Extended operation temperature Tvj op
Low switching losses
Low VCEsat
Tvj op = 150° C
VCEsat with positive temperature coefficient
Mechanical features
Isolated base plate
Standard housing
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