Références fabricant

Infineon IKW50N120CS7XKSA1, N-Channel IGBT, 50 A 1.2 kV, 3-Pin TO-247, Through Hole

N° de stock RS:: 232-6732
Référence fabricant:: IKW50N120CS7XKSA1
Fabricant:: Infineon

Infineon IKW50N120CS7XKSA1, N-Channel IGBT, 50 A 1.2 kV, 3-Pin TO-247, Through Hole

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Sous-total (1 unité)*

7,39 €

(TVA exclue)

8,94 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité
1 - 9	7,39 €
10 - 24	6,36 €
25 - 49	5,92 €
50 - 99	5,54 €
100 +	5,10 €

*Prix donné à titre indicatif

N° de stock RS:: 232-6732
Référence fabricant:: IKW50N120CS7XKSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	50A
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Maximum Power Dissipation Pd	428W
	Number of Transistors	1
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Minimum Operating Temperature	-55°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Operating Temperature	175°C
	Height	5.3mm
	Length	21.5mm
	Width	16.3mm
	Series	IKW50N120CS7
	Standards/Approvals	JEDEC47/20/22
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 50A
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Maximum Power Dissipation Pd 428W
	Number of Transistors 1
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Minimum Operating Temperature -55°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Operating Temperature 175°C
	Height 5.3mm
	Length 21.5mm
	Width 16.3mm
	Series IKW50N120CS7
	Standards/Approvals JEDEC47/20/22
	Automotive Standard No

Datasheet - IKW50N120CS7XKSA1

Infineon IKW50N120CS7 Series IGBT, 1200V Maximum Collector Emitter Voltage, 50A Max Continuous Collector Current - IKW50N120CS7XKSA1

This IGBT is a through-hole, TO-247 packaged power switching device designed for high-voltage power electronics. It functions as an N-channel transistor suitable for systems requiring high collector-emitter voltage handling and substantial continuous current capacity, operating across a wide ambient temperature range for industrial use.

Features and Benefits:

• 1200 V collector-emitter rating enables high-voltage switching
• 50 A continuous current supports heavy-load applications
• 2 V maximum Vce(sat) reduces conduction losses under load
• 428 W power dissipation allows sustained thermal loading
• ±20 V gate-emitter limit permits robust gate-drive swings
• JEDEC47/20/22 approval ensures standardised testing compliance

Applications

• Suitable for industrial motor-drive inverter stages
• Ideal for high-voltage DC-DC conversion modules
• Used with power supplies for heavy industrial equipment
• Can be used for switched-mode power conversion systems
• Suitable for laboratory high-voltage test setups

What package style and mounting method does it use?

It is supplied in a TO-247 package and designed for through-hole mounting.

What temperature range can it tolerate during operation?

It is rated to operate from −55 °C up to a maximum of 175 °C.

How many transistor elements are contained in the device?

The device comprises a single transistor element.

What are the physical height, width and length of the package?

The package measures 5.3 mm in height, 16.3 mm in width and 21.5 mm in length.

Is this component intended for automotive-standard applications?

No, it is not specified for automotive-standard use.

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