Infineon IKW50N120CS7XKSA1, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 232-6732
- Référence fabricant:
- IKW50N120CS7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
6,01 €
(TVA exclue)
7,27 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 238 unité(s) expédiée(s) à partir du 16 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,01 € |
| 10 - 24 | 5,17 € |
| 25 - 49 | 4,81 € |
| 50 - 99 | 4,51 € |
| 100 + | 4,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 232-6732
- Référence fabricant:
- IKW50N120CS7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 428W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Length | 21.5mm | |
| Width | 16.3 mm | |
| Series | IKW50N120CS7 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 428W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Length 21.5mm | ||
Width 16.3 mm | ||
Series IKW50N120CS7 | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon's 50 A TRENCHSTOP IGBT7 S7 discrete comes in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contributing to overall low total losses. Potential applications include industrial drives, industrial power supplies and solar inverters.
Good controllability
Full rated free wheeling diode with improved softness
Higher power density without heatsink redesign
Ease to design to meet EMI requirement
Liens connexes
- Infineon IKW50N120CS7XKSA1 Single IGBT 3-Pin TO-247-3, Through Hole
- Infineon IKW25N120CS7XKSA1 Single IGBT 3-Pin TO-247-3, Through Hole
- Infineon IKW40N120CS7XKSA1 Single IGBT 3-Pin TO-247-3, Through Hole
- Infineon IKW15N120CS7XKSA1 Single IGBT 3-Pin TO-247-3, Through Hole
- Infineon IKW08N120CS7XKSA1 Single IGBT 3-Pin TO-247-3, Through Hole
- Infineon 50 A 1200 V Through Hole
- Infineon IKW25T120FKSA1 50 A 1200 V Through Hole
- Infineon IKW50N120CH7XKSA1 50 A 1200 V Through Hole