Infineon IKW25T120FKSA1, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

Voir l’ensemble des IGBTs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
914-0220
Référence fabricant:
IKW25T120FKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

50A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

190W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

50ns

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC, Pb-Free, RoHS

Series

TrenchStop

Automotive Standard

No

Energy Rating

7mJ

Infineon TrenchStop IGBT Transistors, 1100 to 1600V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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