Infineon IKW50N120CS7XKSA1, N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 232-6731
- Référence fabricant:
- IKW50N120CS7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
129,87 €
(TVA exclue)
157,14 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 240 unité(s) expédiée(s) à partir du 15 octobre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 4,329 € | 129,87 € |
| 60 - 120 | 4,113 € | 123,39 € |
| 150 + | 3,939 € | 118,17 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 232-6731
- Référence fabricant:
- IKW50N120CS7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 428W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 21.5mm | |
| Height | 5.3mm | |
| Series | IKW50N120CS7 | |
| Width | 16.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 428W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 21.5mm | ||
Height 5.3mm | ||
Series IKW50N120CS7 | ||
Width 16.3mm | ||
Automotive Standard No | ||
Infineon IKW50N120CS7 Series IGBT, 1200V Maximum Collector Emitter Voltage, 50A Max Continuous Collector Current - IKW50N120CS7XKSA1
This IGBT is a through-hole, TO-247 packaged power switching device designed for high-voltage power electronics. It functions as an N-channel transistor suitable for systems requiring high collector-emitter voltage handling and substantial continuous current capacity, operating across a wide ambient temperature range for industrial use.
Features and Benefits:
• 1200 V collector-emitter rating enables high-voltage switching
• 50 A continuous current supports heavy-load applications
• 2 V maximum Vce(sat) reduces conduction losses under load
• 428 W power dissipation allows sustained thermal loading
• ±20 V gate-emitter limit permits robust gate-drive swings
• JEDEC47/20/22 approval ensures standardised testing compliance
• 50 A continuous current supports heavy-load applications
• 2 V maximum Vce(sat) reduces conduction losses under load
• 428 W power dissipation allows sustained thermal loading
• ±20 V gate-emitter limit permits robust gate-drive swings
• JEDEC47/20/22 approval ensures standardised testing compliance
Applications
• Suitable for industrial motor-drive inverter stages
• Ideal for high-voltage DC-DC conversion modules
• Used with power supplies for heavy industrial equipment
• Can be used for switched-mode power conversion systems
• Suitable for laboratory high-voltage test setups
• Ideal for high-voltage DC-DC conversion modules
• Used with power supplies for heavy industrial equipment
• Can be used for switched-mode power conversion systems
• Suitable for laboratory high-voltage test setups
What package style and mounting method does it use?
It is supplied in a TO-247 package and designed for through-hole mounting.
What temperature range can it tolerate during operation?
It is rated to operate from −55 °C up to a maximum of 175 °C.
How many transistor elements are contained in the device?
The device comprises a single transistor element.
What are the physical height, width and length of the package?
The package measures 5.3 mm in height, 16.3 mm in width and 21.5 mm in length.
Is this component intended for automotive-standard applications?
No, it is not specified for automotive-standard use.
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