Infineon, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

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N° de stock RS:
218-4393
Référence fabricant:
IHW25N120E1XKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

50A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

231W

Number of Transistors

1

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 ±25 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

21.1mm

Standards/Approvals

JEDEC

Height

5.21mm

Series

Resonant Soft-Switching

Automotive Standard

No

The Infineon IHW series reverse conducting IGBT 1200 V, 25 A with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking. It has collector emitter voltage of 1200 V and 25 A of collector current.

Easy parallel switching capability due to positive temperature coefficient

Optimized for performance with switching frequencies from 18kHz–40kHz

Low losses help designs meet energy efficiency standards

Drop-in replacement for existing designs

Soft switching for good EMI behaviour

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