Littelfuse, Type N-Channel IGBT, 20 A 365 V, 3-Pin TO-263, Surface

Voir l’ensemble des IGBTs
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N° de stock RS:
171-0128
Référence fabricant:
NGB8207ABNT4G
Fabricant:
Littelfuse
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Marque

Littelfuse

Product Type

IGBT

Maximum Continuous Collector Current Ic

20A

Maximum Collector Emitter Voltage Vceo

365V

Maximum Power Dissipation Pd

165W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

6μs

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

15 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Maximum Operating Temperature

175°C

Height

4.83mm

Width

15.88 mm

Length

10.29mm

Standards/Approvals

RoHS

Series

Ignition IGBT

Automotive Standard

No

Energy Rating

500mJ

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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