Littelfuse NGB8207ABNT4G IGBT, 50 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount

Voir l’ensemble des IGBTs
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N° de stock RS:
171-0128
Référence fabricant:
NGB8207ABNT4G
Fabricant:
Littelfuse
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Marque

Littelfuse

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

365 V

Maximum Gate Emitter Voltage

±15V

Maximum Power Dissipation

165 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.29 x 9.65 x 4.83mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.


IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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