STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole
- N° de stock RS:
- 168-8940
- Référence fabricant:
- STGP5H60DF
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
40,90 €
(TVA exclue)
49,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 50 unité(s) expédiée(s) à partir du 09 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,818 € | 40,90 € |
| 100 - 200 | 0,778 € | 38,90 € |
| 250 - 450 | 0,737 € | 36,85 € |
| 500 - 700 | 0,696 € | 34,80 € |
| 750 + | 0,655 € | 32,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-8940
- Référence fabricant:
- STGP5H60DF
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current | 10 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 88 W | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 15.75mm | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 221mJ | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 855pF | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current 10 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 88 W | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 15.75mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 221mJ | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 855pF | ||
- Pays d'origine :
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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