STMicroelectronics STGWT80H65FB, N-Channel IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole
- N° de stock RS:
- 168-8742
- Référence fabricant:
- STGWT80H65FB
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 168-8742
- Référence fabricant:
- STGWT80H65FB
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current (Ic) | 120 A | |
| Maximum Collector Emitter Voltage (Vceo) | 650 V | |
| Pin Count | 3 | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Maximum Gate Emitter Voltage (VGEO) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Product Type IGBT | ||
Maximum Continuous Collector Current (Ic) 120 A | ||
Maximum Collector Emitter Voltage (Vceo) 650 V | ||
Pin Count 3 | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Maximum Gate Emitter Voltage (VGEO) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Minimum Operating Temperature -55 °C | ||
- Pays d'origine :
- KR
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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