IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole
- N° de stock RS:
- 168-4773
- Référence fabricant:
- IXYP20N120C3
- Fabricant:
- IXYS
Sous-total (1 tube de 30 unités)*
116,01 €
(TVA exclue)
140,37 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 3,867 € | 116,01 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-4773
- Référence fabricant:
- IXYP20N120C3
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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- Pays d'origine :
- US
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
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