Infineon FS100R12KT4GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V AG-ECONO3-4, Panel Mount

Voir l’ensemble des IGBTs

Sous-total (1 plateau de 10 unités)*

1 434,12 €

(TVA exclue)

1 735,29 €

(TVA incluse)

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Unité
Prix par unité
le plateau*
10 +143,412 €1 434,12 €

*Prix donné à titre indicatif

N° de stock RS:
166-0911
Référence fabricant:
FS100R12KT4GBOSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

515 W

Package Type

AG-ECONO3-4

Configuration

3 Phase Bridge

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Statut RoHS non applicable

Pays d'origine :
MY

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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