Infineon FS75R12KE3GBOSA1, Type N-Channel IGBT Module, 75 A 1.2 kV, 35-Pin ECONO3, Through Hole

Voir l’ensemble des IGBTs

Sous-total (1 boîte de 10 unités)*

1 123,49 €

(TVA exclue)

1 359,42 €

(TVA incluse)

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  • Expédition à partir du 16 juin 2026
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Unité
Prix par unité
La Boite*
10 +112,349 €1 123,49 €

*Prix donné à titre indicatif

N° de stock RS:
124-8792
Référence fabricant:
FS75R12KE3GBOSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current Ic

75A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1.2kV

Maximum Power Dissipation Pd

355W

Number of Transistors

6

Package Type

ECONO3

Mount Type

Through Hole

Channel Type

Type N

Pin Count

35

Switching Speed

1MHz

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Operating Temperature

125°C

Height

17mm

Width

62 mm

Length

122mm

Series

FS75R12KE3G

Standards/Approvals

No

Automotive Standard

No

Pays d'origine :
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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