Infineon FZ300R12KE3GHOSA1 Single IGBT Module, 480 A 1200 V, 5-Pin 62MM Module, Panel Mount

Offre groupée disponible

Sous-total (1 boîte de 10 unités)*

862,80 €

(TVA exclue)

1 044,00 €

(TVA incluse)

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  • Expédition à partir du 31 mars 2026
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Unité
Prix par unité
La Boite*
10 - 1086,28 €862,80 €
20 +81,966 €819,66 €

*Prix donné à titre indicatif

N° de stock RS:
124-8784
Référence fabricant:
FZ300R12KE3GHOSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

480 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1450 W

Configuration

Single

Package Type

62MM Module

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

106.4 x 61.4 x 36.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+125 °C

Pays d'origine :
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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