- N° de stock RS:
- 124-8784
- Référence fabricant:
- FZ300R12KE3GHOSA1
- Fabricant:
- Infineon
En cours d'approvisionnement - expédition le 16/05/2024, livraison sous 4 jour(s)
Ajouté
Prix L'unité (en boîte de 10)
104,992 €
(TVA exclue)
127,04 €
(TVA incluse)
Unité | Prix par unité | La Boite* |
10 - 10 | 104,992 € | 1 049,92 € |
20 + | 99,743 € | 997,43 € |
*prix conseillé |
- N° de stock RS:
- 124-8784
- Référence fabricant:
- FZ300R12KE3GHOSA1
- Fabricant:
- Infineon
Documentation technique
Législations et de normes
- Pays d'origine :
- CN
Détails du produit
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 480 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1450 W |
Configuration | Single |
Package Type | 62MM Module |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 5 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 106.4 x 61.4 x 36.5mm |
Maximum Operating Temperature | +125 °C |
Minimum Operating Temperature | -40 °C |
- N° de stock RS:
- 124-8784
- Référence fabricant:
- FZ300R12KE3GHOSA1
- Fabricant:
- Infineon