Semikron SEMiX603GB12E4p Series IGBT Module, 1.1 kA 1200 V, 11-Pin SEMiX®3p, Through Hole
- N° de stock RS:
- 122-0393
- Référence fabricant:
- SEMiX603GB12E4p
- Fabricant:
- Semikron
Fonctionnalité momentanément indisponible, veuillez nous contacter
Prix la pièce
387,32 €
(TVA exclue)
468,66 €
(TVA incluse)
Unité | Prix par unité |
---|---|
1 - 1 | 387,32 € |
2 + | 379,59 € |
- N° de stock RS:
- 122-0393
- Référence fabricant:
- SEMiX603GB12E4p
- Fabricant:
- Semikron
Documentation technique
Législations et de normes
Détails du produit
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
For suitable press-fit gate driver modules see 122-0385 to 122-0387
Low profile solder-free mounting package
Trenchgate technology IGBTs
VCE(sat) has positive temperature coefficient
High short circuit current capability
Press-fit pins as auxiliary contacts
UL recognized
Trenchgate technology IGBTs
VCE(sat) has positive temperature coefficient
High short circuit current capability
Press-fit pins as auxiliary contacts
UL recognized
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
---|---|
Maximum Continuous Collector Current | 1.1 kA |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | 20V |
Configuration | Series |
Package Type | SEMiX®3p |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 11 |
Transistor Configuration | Series |
Dimensions | 150 x 62.4 x 17mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |