Semikron Danfoss SEMiX603GB12E4p, Type N-Channel IGBT Module, 1.1 kA 1200 V, 11-Pin SEMiX3p, Surface

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Sous-total (1 unité)*

435,43 €

(TVA exclue)

526,87 €

(TVA incluse)

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Prix par unité
1 - 1435,43 €
2 +426,72 €

*Prix donné à titre indicatif

N° de stock RS:
122-0393
Référence fabricant:
SEMiX603GB12E4p
Fabricant:
Semikron Danfoss
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Marque

Semikron Danfoss

Maximum Continuous Collector Current Ic

1.1kA

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Package Type

SEMiX3p

Mount Type

Surface

Channel Type

Type N

Pin Count

11

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.4V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Series

Trench

Length

150mm

Height

17mm

Automotive Standard

No

SEMiX® Dual IGBT Modules


Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.

For suitable press-fit gate driver modules see 122-0385 to 122-0387

• Low profile solder-free mounting package

• Trenchgate technology IGBTs

• VCE(sat) has positive temperature coefficient

• High short circuit current capability

• Press-fit pins as auxiliary contacts

• UL recognized

IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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