Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 110-7157
- Référence fabricant:
- IGW50N65H5FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 4 unités)*
15,772 €
(TVA exclue)
19,084 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 192 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 4 - 16 | 3,943 € | 15,77 € |
| 20 - 36 | 3,748 € | 14,99 € |
| 40 - 96 | 3,588 € | 14,35 € |
| 100 - 196 | 3,353 € | 13,41 € |
| 200 + | 3,155 € | 12,62 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 110-7157
- Référence fabricant:
- IGW50N65H5FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 305 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Energy Rating | 0.7mJ | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 3000pF | |
| Minimum Operating Temperature | -40 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 305 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Energy Rating 0.7mJ | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 3000pF | ||
Minimum Operating Temperature -40 °C | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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