Infineon IGW50N65H5FKSA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 110-7157
- Référence fabricant:
- IGW50N65H5FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 4 unités)*
15,60 €
(TVA exclue)
18,88 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 132 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 4 - 16 | 3,90 € | 15,60 € |
| 20 - 36 | 3,705 € | 14,82 € |
| 40 - 96 | 3,55 € | 14,20 € |
| 100 - 196 | 3,315 € | 13,26 € |
| 200 + | 3,12 € | 12,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 110-7157
- Référence fabricant:
- IGW50N65H5FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 305W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Series | TrenchStop | |
| Energy Rating | 0.7mJ | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 305W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC | ||
Series TrenchStop | ||
Energy Rating 0.7mJ | ||
Automotive Standard No | ||
Infineon TrenchStop Series IGBT, 650V Maximum Collector Emitter Voltage, 80A Max Continuous Collector Current - IGW50N65H5FKSA1
This insulated-gate bipolar transistor is a high-voltage switching device designed for power conversion and control in demanding electronics. It is configured as an N-channel power transistor in a through-hole TO-247 package and serves applications requiring robust collector-emitter voltage handling and elevated current capacity. The component complies with common industry environmental and packaging norms, and its thermal endurance allows use across a wide ambient range.
Features and Benefits:
• 650V collector-emitter capability for high-voltage switching applications
• 80A continuous collector current to handle substantial load currents
• 2.1V saturation voltage minimises conduction losses for efficiency
• 305W power dissipation supports high-power operation
• ±20V gate-emitter rating secures gate-drive flexibility
• 0.7mJ energy rating provides avalanche energy tolerance
• 80A continuous collector current to handle substantial load currents
• 2.1V saturation voltage minimises conduction losses for efficiency
• 305W power dissipation supports high-power operation
• ±20V gate-emitter rating secures gate-drive flexibility
• 0.7mJ energy rating provides avalanche energy tolerance
Applications
• Suitable for motor-drive inverter stages in industrial equipment
• Used with high-voltage power supplies and converters
• Ideal for switch-mode power in traction electronics
• Can be used for industrial welding and induction heating control
• Suitable for power-factor correction and renewable-energy inverters
• Used with high-voltage power supplies and converters
• Ideal for switch-mode power in traction electronics
• Can be used for industrial welding and induction heating control
• Suitable for power-factor correction and renewable-energy inverters
What temperature extremes can it withstand in operation?
The device operates over a wide temperature span from -40°C up to 175°C, enabling use in harsh thermal environments.
Which mounting approach is required for thermal management?
It is supplied in a TO-247 through-hole package intended for heatsinking to manage the 305W maximum dissipation.
Which standards cover its environmental and packaging acceptance?
The component meets RoHS restrictions and adheres to JEDEC packaging norms.
How many electrical connections does it use and what is the channel type?
It presents three pins for connection and is implemented as an N-type channel transistor.
Liens connexes
- Infineon 80 A 650 V Through Hole
- Infineon IKW50N65ES5XKSA1 80 A 650 V Through Hole
- Infineon IKW75N65ES5XKSA1 80 A 650 V Through Hole
- Infineon IKW50N65EH5XKSA1 80 A 650 V Through Hole
- Infineon 80 A 650 V Through Hole
- Infineon IHW50N65R5XKSA1 80 A 650 V Through Hole
- Infineon 80 A 650 V Through Hole
- Infineon AIKW50N65RF5XKSA1 80 A 650 V Through Hole