Infineon FS200R12KT4RBOSA1 3 Phase Bridge IGBT Module, 280 A 1200 V, 35-Pin EconoPACK 3, Surface Mount
- N° de stock RS:
- 110-7155
- Référence fabricant:
- FS200R12KT4RBOSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
140,96 €
(TVA exclue)
170,56 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 21 décembre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 1 | 140,96 € |
| 2 - 2 | 133,90 € |
| 3 + | 125,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 110-7155
- Référence fabricant:
- FS200R12KT4RBOSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 280 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 1000 W | |
| Configuration | 3 Phase Bridge | |
| Package Type | EconoPACK 3 | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 35 | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 122 x 62 x 17mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +150 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 280 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 1000 W | ||
Configuration 3 Phase Bridge | ||
Package Type EconoPACK 3 | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 35 | ||
Transistor Configuration 3 Phase | ||
Dimensions 122 x 62 x 17mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||
Statut RoHS non applicable
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
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