Infineon IKZA100N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 140 A 650 V, 4-Pin

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N° de stock RS:
285-031
Référence fabricant:
IKZA100N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

140 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

429 W

Package Type

PG-TO247-4-STD-NT3.7

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

The Infineon IGBT is engineered to deliver exceptional switching capabilities while maintaining low saturation voltage. Built using cutting edge TRENCHSTOP IGBT7 technology, it operates efficiently at 650 V, optimising power loss management in demanding applications. The device combines high speed operation with reliability, making it ideal for industrial UPS systems, EV charging applications, and string inverters. Its integrated soft recovery diode ensures smooth transitions, while robust thermal management features enhance longevity and performance under stress.

Low switching losses boost efficiency
Humidity robustness for challenging environments
Optimized for flexible hard switching
Smooth switching reduces electromagnetic interference
Integrated PSpice models support design optimization
Qualified for industrial use per JEDEC standards
Easy integration simplifies installation process

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