Infineon IKWH100N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 140 A 650 V, 3-Pin

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Actuellement indisponible
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N° de stock RS:
285-005
Référence fabricant:
IKWH100N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

140 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

427 W

Number of Transistors

1

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

PG-TO247-3-STD-NN4.8

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT is a state of the art power module that leverages cutting edge TRENCHSTOP IGBT7 technology. Designed for high efficiency, it delivers a low saturation voltage with swift switching capabilities, making it ideal for demanding industrial applications. This module supports a collector emitter voltage rating of 650 V and is engineered for robust performance under various conditions. With its integrated Emitter Controlled diode, it ensures smooth operation whilst maintaining user safety with impressive humidity robustness. Suitable for applications such as industrial UPS systems, EV charging, and string inverters, this product exemplifies reliability and advanced engineering in the world of power electronics. Its comprehensive thermal management and product validation according to JEDEC standards position it as a trusted choice among engineers seeking high performance solutions.

Offers low switching losses for performance
Designed for superior collector emitter saturation voltage
Includes fast recovery diode for optimal response
Ensures humidity robustness for reliable operation
Optimized for various high power applications
Comprehensive thermal management for efficient heat dissipation
Qualified for industrial applications for reliability
Delivers smooth switching to reduce electrical noise
Supports a wide range of voltages for adaptability

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