Infineon IKQ75N120CH7XKSA1, Type N-Channel IGBT 1200 V, 3-Pin PG-TO-247-3-PLUS-N, Through Hole

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Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
Options de conditionnement :
N° de stock RS:
284-672P
Référence fabricant:
IKQ75N120CH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

549W

Package Type

PG-TO-247-3-PLUS-N

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Standards/Approvals

No

Automotive Standard

No

The Infineon IGBT with high speed 1200 V trench stop IGBT 7 technology is designed to deliver unparalleled performance in demanding applications. It features a state of the ART design that combines efficient power handling with low switching losses, making it Ideal for high efficiency power converters. With its robust co packing of a full rated current, soft commutating Rapid diode, and an optimised thermal performance, this device is tailored for industrial and automotive applications, including EV charging and welding systems. Offering a maximum junction temperature of 175°C, this product ensures reliability and longevity, even under extreme conditions.

Optimized for high efficiency in hard switching

Pb free lead plating for environmental compliance

Easy paralleling with positive temperature coefficient

Well suited for industrial applications like UPS and inverters

Comprehensive product spectrum with modelling support

Delivers low saturation voltage for energy savings

Transient gate emitter voltages improve switching performance

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