Infineon IKZA50N65EH7XKSA1, Type N-Channel IGBT, 80 A 650 V, 4-Pin PG-TO-247-4-STD-NT3.7, Through Hole

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N° de stock RS:
284-623
Référence fabricant:
IKZA50N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

250W

Package Type

PG-TO-247-4-STD-NT3.7

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Minimum Operating Temperature

40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Height

5.1mm

Standards/Approvals

No

Length

21.1mm

Width

15.9 mm

Automotive Standard

No

The Infineon IGBT leverages TRENCHSTOP IGBT7 technology, ensuring exceptional performance in applications requiring low saturation voltage and Rapid switching capabilities. Designed for industrial use, it operates at a collector emitter voltage of 650 V while maintaining impressive efficiency. The device is particularly suited for demanding environments, such as industrial uninterruptible power supplies, electric vehicle charging, and solar inverters, offering a cohesive solution for your power management needs. Furthermore, its robust construction enhances reliability across a wide temperature range, making it a preferred choice for various applications.

Low switching losses improve efficiency

Smooth switching reduces electromagnetic interference

Humidity robustness ensures reliable performance

Optimised for hard switching applications

Includes PSpice models for integration

Qualified for stringent industrial standards

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