Infineon IKZA40N65EH7XKSA1, Type N-Channel IGBT, 80 A 650 V, 4-Pin PG-TO-247-4-STD-NT3.7, Through Hole

Voir l’ensemble des IGBTs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
Options de conditionnement :
N° de stock RS:
284-617
Référence fabricant:
IKZA40N65EH7XKSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Package Type

PG-TO-247-4-STD-NT3.7

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Maximum Gate Emitter Voltage VGEO

20 V

The Infineon IGBT is designed to deliver high performance with a low saturation voltage, utilising the latest TRENCHSTOP technology. By integrating high speed capabilities with rugged characteristics, this product stands out in various applications, from industrial uninterruptible power supplies to electric vehicle charging systems. The device operates efficiently at a collector emitter voltage of 650 V and can handle high current levels, making it Ideal for demanding conditions. Its capabilities are further enhanced with a very soft, fast recovery diode, ensuring smooth operation. Aimed at engineers and technicians, the product is built to last, boasting moisture resistance and compliance with rigorous industrial standards.

Optimised for hard switching applications

Excellent humidity robustness for reliability

Low saturation voltage enhances efficiency

Fast recovery diode for smooth switching

Qualified for industrial use standards

Complete spectrum with PSpice models